solid state devices, inc. spt6060/3 features: data sheet #: TR0017b maximum ratings symbol units value v cbo 350 volts collector-base voltage i c i cm 20 40 collector current collector-emitter voltage v ceo 350 amps volts o c w w/ o c o c/w ? high voltage rating - 350v sustaining ? fast switching capabilities / fast turn-off time ? thermally stable structure for reliability in power cycling ? overload short circuit rating 20 amp 350 volts npn darlington transistor operating and storage temperature t j, t stg -65 to +150 125 1 thermal resistance, junction to case r q jc 1 total device dissipation derate above 25 o c p d i b i bm 4 6 base current amps designer's data sheet note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. case outline: to-3 pin out: case - collector 1 - base 2 - emmiter to-3 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 continuous peak @ t c = 25 o c applications : ? high voltage switching power supplies ? inverter / regulators ? deflection circuits ? pulse-width-modulated (pwm) system control circuits continuous peak 1.197 1.177 ? .875 max 2x .043 .038 .675 .655 .525 max .135 max .440 .420 2x .225 .205 .450 .250 2x .312 min 2x ? .165 .151 2x r.188 max seating plane 2 1
solid state devices, inc. spt6060/3 v dc 300 - v ceo(sus) collector-emitter sustaining voltage (i c = 2a, l = 2mh) ma dc - 1.0 i ceo collector cutoff current (v ce = rated value, t c = 25 o c ) ma dc - 300 i ebo min max electrical characteristics symbol units mj overload short circuit rating ( v ceo(sus) = 300v, i c = 30a, i b = 300ma , time = 10 : s ) 90 - dc current gain* (v ce = 5v dc ) 30 20 15 1.4 1.5 2.0 collector-emitter saturation voltage* v ce(sat) v dc h fe base-emitter saturation voltage* 2.5 3.0 v dc v be (sat) small signal current gain (i c = 1a dc , v ce = 10v dc, f = 1mhz) 10 - h fe v cc = 150v dc , i c = 10a dc , i b1 = i b2 = 1.0a dc , t p = 4 m s min. storage time * pulse test: pulse width = 300 m s, duty cycle = 2% t f 1.0 m s i c = 10a dc i c = 15a dc i c = 20a dc - - 120 80 60 - emitter cutoff current (v eb = 4v dc , i c = 0) i c = 10a dc , i b = 2a dc i c = 10a dc , i b = 1a dc i c = 20a dc , i b = 2a dc i c = 10a dc , i b = 2a dc i c = 20a dc , i b = 2a dc rise time fall time t r 0.4 m s - t s 2.5 m s - 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 forward bias safe operating area 20 10 0.125 fbsoa v ce = 6.25v, t = 1sec v ce = 12.5v, t = 1sec v ce = 300v, t = 1sec - - - a note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: TR0017b
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